|
Session 3:
AMOLEDs I (Active-Matrix Devices) |
|
Tuesday, May 20 / 10:50 am - 12:10 pm / Concourse Hall 151 |
|
Chair: Mike Hack, Universal Display Corp. |
|
Co-Chair: Takatoshi Tsujimura, Kodak Japan, Ltd. |
|
3.1: |
12.1-in. WXGA AMOLED
Display Driven by In-Ga-Zn-O TFT Arrays
Yeon-Gon Mo, Samsung SDI, Yongin, Korea |
|
3.2: |
15-in. XGA Dual-Plate OLED
Display (DOD) Based on a-Si TFT Backplane
Chang-Wook Han, LG.Philips LCD, Kyunggi-do, Korea |
|
3.3: |
Invited Paper: AMOLED
Technologies for Uniform Image and Sufficient Lifetime of Image
Sticking
Yojiro Matsueda, Samsung, SDI Co., Ltd., Kyunggi-do, Korea |
|
3.4: |
Invited Paper: A Novel Use
of MEMS Switches in Driving AMOLEDs
Jun-Bo Yoon, KAIST, Daejeon, Korea
|
| Session 9:
AMOLEDs II (Active-Matrix Devices) |
|
Tuesday, May 20 / 2:00 - 3:10 pm / Concourse Hall 151 |
|
Chair: Roger G. Stewart, Sourland Mountain Associates |
|
Co-Chair: Makoto Ohkura, Hitachi Displays, Ltd. |
|
9.1: |
A Stable Full-Color AMOLED
Display Using a-Si:H TFTs and White PHOLEDs
Jin Jang, Kyung Hee University, Seoul, Korea |
|
9.2: |
Sequential Lateral Solidification (SLS)
Process for Large-Area AMOLEDs
Jae Beom Choi, Samsung Electronics Co., Ltd., Kyunggi-do, Korea |
|
9.3: |
A 15-in. AMOLED Display with SPC TFTs
and a Symmetric Driving Method
Sang-Hoon Jung, LG.Philips LCD R&D Center, Anyang, Korea
|
|
9.4: |
Late-News
Paper: Fast Current-Programming Method to OLED
Chang Hoon Shim, Kyushu University, Fukuoka, Japan
|
| Session 16:
AMLCD TV (Active-Matrix Devices) |
|
Tuesday, May 20 / 3:40 - 5:00 pm / Concourse Hall 151 |
|
Chair:
Kalluri R. Sarma, Honeywell, Inc.
|
|
Co-Chair:
Nam Deog Kim, Samsung Electronics Co., Ltd.
|
|
16.1: |
82-in. Ultra-Definition
LCD Using New Driving Scheme and Advanced Super-PVA Technology
Sang Soo Kim, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea |
|
16.2: |
A Novel Super-PVA Cell Structure with
High Contrast Ratio
Su Jeong Kim, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea |
|
16.3: |
Enhanced
Oblique-Viewing-Angle Color Performance for Super-PVA Panels
Bongim Park, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea |
|
16.4: |
Development of
Asymmetric-Gate-Coupled Eight-Domain (AGC-8D) HVA for TFT-LCD TVs
Po-Sheng Shih, Hannstar, Taoyuan, Taiwan
|
| Session 23:
Flexible Displays I (Active-Matrix Devices) |
|
Wednesday, May 21, 2008 / 9:00 - 10:00 am / Petree Hall |
|
Chair:
Jin Jang, Kyung Hee University
|
|
Co-Chair:
Jurgen Daniel, Palo Alto Reseach Center
|
|
23.1: |
Invited Paper:
Models and
Experiments of Mechanical Integrity for Flexible Displays
Yves Leterrier, Laboratoire de Technolegie Des Composites et
Polymères (LTC), Ecole Polytechniqu, Lausanne, Switzerland |
|
23.2: |
A 10-in. Printed Flexible
Active-Matrix OTFT Array for QR-LPD Based Motion-Picture Displays
Hiroki Maeda, Dai Nippon Printing Co., Ltd., Chiba, Japan |
|
23.3: |
Flexible
Field-Sequential-Color FLCD Panels Driven by Poly-Si TFTs
Yoji Iwamoto, Dai Nippon Printing Co., Ltd., Chiba, Japan |
|
23.4: |
Active-Matrix Backplanes
Produced by Roll-to-Roll Self-Aligned Imprint Lithography
Warren Jackson, Hewlett-Packard Laboratories, Palo Alto, CA, USA
|
| Session 30:
Flexible Displays II (Active-Matrix Devices) |
|
Wednesday, May 21 / 10:40 - 11:40 am / Petree Hall |
|
Chair:
Jürgen Daniel, Palo Alto Reseach Center
|
|
Co-Chair:
Makoto Ohkura, Hitachi Displays, Ltd.
|
|
30.1: |
Flexible Image Sensor Made
of a-Si:H TFTs on Metal Foil
Jin Jang, Kyung Hee University, Seoul, Korea |
|
30.2: |
Active-Matrix
Electrophoretic Displays on Temporary Bonded Stainless-Steel
Substrates with 180°C a-Si:H TFTs
Shawn O'Rourke, Arizona State University, Tempe, AZ, USA |
|
30.3: |
Highly Flexible
Low-Power-Consumption AMOLED Displays on Ultra-Thin
Stainless-Steel Substrates
Ray Ma, Universal Display Corp., Trenton, NJ, USA
|
| Session 42:
Oxide TFTs (Active-Matrix Devices) |
|
Thursday, May 22 / 9:00 - 10:20 am / Petree Hall |
|
Chair:
Hyun Jae Kim, Yonsei University
|
|
Co-Chair:
Takatoshi Tsujimura, Kodak Japan, Ltd.
|
|
42.1: |
Invited Paper: Improved Amorphous In-Ga-Zn-O
TFTs
Ryo Hayashi, Canon Research Center, Tokyo, Japan |
|
42.2: |
The World's Largest (15-in.) XGA LCD
Panel Using IGZO Oxide TFTs
Je-Hun Lee, Samsung Electronics Co., Ltd., Youngin, Korea |
|
42.3: |
Transparent ZnO TFT for the Application
of High-Aperture-Ratio Bottom-Emitting AMOLED Display
Sang-Hee Park, ETRI, Daejeon, Korea
|
|
42.4: |
Late-News
Paper: 40-in. QVGA AMOLED Driven by the
Threshold-Voltage-Controlled Amorphous GIZO (Ga2O3-In2O3-ZnO) TFT
Kyoung-Seok Son, Samsung Advanced Institute of Technology,
Yongin-Si, Korea
|
| Session 48:
Active-Matrix Display Sensors (Active-Matrix Devices) |
|
Thursday, May 22 / 10:40 am - 12:00 pm / Petree Hall |
|
Chair: Fujio Okumura, NEC Corp.
|
|
Co-Chair:
Norbert Fruehauf, University of Stuttgart
|
|
48.1: |
A New Monolithic Poly-Si Ambient
Light-Sensor System with Wide Dynamic Range for Active-Matrix
Displays by Employing an Adaptive Sensitivity Control
Hyun-Sang Park, Seoul National University, Seoul, Korea |
|
48.2: |
Display Architecture Suitable for
Multiple Ambient Light-Sensor Integration Using LTPS Technology
Takashi Nakamura, Toshiba Matsushita Display Technology Co., Ltd.,
Saitama, Japan |
|
48.3: |
A 2-in. LTPS AMOLED with
Embedded
Lateral p-i-n Photodiode Sensors
Jin Jang, Kyung Hee University, Seoul, Korea |
|
48.4: |
Sensor-Embedded Electrophoretic
Display Using Organic TFTs on Plastic
Jin Jang, Kyung Hee University, Seoul, Korea
|
| Session 55:
Integrated AMLCDs (Active-Matrix Devices) |
|
Thursday, May 22 / 1:30 -
2:50 pm / Petree Hall |
|
Chair:
John Zhong, Apple, Inc.
|
|
Co-Chair:
Hyun Jae Kim, Yonsei University
|
|
55.1: |
An Inner
Touch-Screen-Panel-Embedded 12.1-in., a-Si:H TFT-LCD
Bong-Hyun You, Samsung Electronics Co., Ltd.,
Chungcheongnam-do,
Korea |
|
55.2: |
Integrated
Active-Matrix Capacitive Sensors for Touch-Panel LTPS TFT-LCDs
Eiji Kanda, Seiko-Epson Corp., Nagano, Japan |
|
55.3: |
Low-Cost 32-in. HDTV
Panel Employing Gate IC Integration and Data-Line Reduction
Min-Cheol Lee, Samsung Electronics Co., Ltd., Chungcheongnam-do,
Korea |
|
55.4: |
Design of Integrated
a-Si Gate Driver Circuits for Low Power Consumption
Injae Hwang, LCD Business Samsung Electronics Co., Ltd.,
Chungcheongnam-do, Korea
|
| Poster Session |
Thursday, May 22 / 4:00 - 7:00 pm / Exhibit Hall B
|
| Active-Matrix
Devices |
|
P.1: |
Artificial Retina
Using Thin-Film Devices
Mutsumi Kimura, Ryukoku University, Shiga, Japan |
|
P.2: |
Pulse-Width
Modulation with Current Uniformization for TFT-OLEDs
Mutsumi Kimura, Ryukoku University, Shiga, Japan |
|
P.3: |
Future Design Impact
of Large-Sized Color-Sequential TFT-LCDs
Kwang Jo Hwang, LG.Philips LCD, Kyunggi-do, Korea |
|
P.4: |
Mechanisms of
Threshold-Voltage Drift in Nanocrystalline TFTs for Active-Matrix
Displays
Francois Templier, CEA-LETI, Grenoble, France |
|
P.5: |
Spacer Technique to
Fabricate poly-Si TFTs with 50-nm Nanowire Channels
Guan-Liang Lin, National Chiao-Tung University, Hsinchu, Taiwan |
|
P.6: |
Zn0.97Zr0.03O TFT
Fabricated by Sol-Gel Method and Its Application for Active-Matrix
LCDs
Shin-Chuan Chiang, Taiwan TFT -LCD Association (TTLA), Hsinchu,
Taiwan |
|
P.7: |
Improving Electrical
Performance of the Scaled Low-Temperature Poly-Si TFTs Using
Vacuum-Encapsulation Technique
Wei-Kai Lin, National Chiao Tung University, Hsinchu, Taiwan |
|
P.8: |
A New Hybrid
Analog/Digital Driving Method to Improve AMOLED Lifetime
Suhwan Kim, Seoul National University, Seoul, Korea |
|
P.9: |
Metallic Nanowire
Film as Transparent Conducting Layer in TFT-LCDs
Shih-Hsiang Lai, Taiwan TFT LCD Association (TTLA), Hsinchu,
Taiwan |
|
P.10: |
Low-Voltage
Transflective LCD with Wide Viewing Angle and Low Gray-Level
Inversion
Chia-Chiang Hsiao, AU Optonics Corp., Hsinchu, Taiwan |
|
P.11: |
Amorphous
In2O3-Ga2O3-ZnO TFTs and ICs on Flexible and Colorless Polyimide
Substrates
Chung-Chih Wu, National Taiwan University, Taipei, Taiwan |
|
P.12: |
A New Stable a-Si:H
TFT Pixel for AMOLEDs by Employing the a-Si:H TFT Photo Sensor
Hee-Sun Shin, Seoul National University, Seoul, Korea |
|
P.13: |
Photosensitivity of
Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays
Chiao Shun Chuang, National Chiao Tung University, Hsinchu,
Taiwan |
|
P.14: |
Low-Cost AMOLED
Televison with Ignis Maxlife Compensating Technology
Gholamreza Chaji, Ignis Innovation, Inc., Waterloo, Ontario,
Canada |
|
P.15: |
A 3-in. Active
Matrix for Color-Sequential LCD (CS-LCD) Based on Metal-Induced
Continuous Zonal Domain (CZD) Polycrystalline-Silicon Technology
Shuyun Zhao, Hong Kong University of Science and Technology,
Hong Kong, China |
|
P.16: |
Noble a-Si:H Gate
Driver with High Stability
Jin Jang, Kyung Hee University, Seoul, Korea |
|
P.17: |
Low-Power Level
Shifter for System-on-Panel Applications
Seung-Woo Lee, Kyung Hee University, Seoul, Korea |
|
P.18: |
Design of a-Si TFT
Gate Drivers and the Area Scaling Properties
Yong Ho Jang, LG.Philips LCD, Kyunggi-do, Korea |
|
P.19: |
Flexible Pentacene
Organic TFTs Using Sol-Gel Hybrid Polymer Gate Dielectrics
Byeong-Soo Bae, KAIST, Daejeon, Korea |
|
P.20: |
Post-Annealing and
Passivations of Transparent Bottom-Gate IGZO TFTs
Doo-Hee Cho, Electronics and Telecommunications Research
Institute, Daejeon, Korea |
|
P.21: |
Stability and
Intergrability Evaluation of Organic TFT with Solution-Processible
Semiconductor
JingYi Yan, ITRI-DTC, Hsinchu, Taiwan |
|
P.22: |
Elecctrical
Stability of ZnO TFT During Gate-Bias Stress
Jae-Hong Jeon, Korea Aerospace University, Kyunggi-do, Korea |
|
P.23: |
Transparent
Amorphous Oxide TFTs Fabricated by Solution Coating Process
Byeong-Soo Bae, KAIST, Daejeon, Korea |
|
P.24: |
Fabrication of
Solution-Processed InGaZnO TFT for AMOLED Backplane
Gun Hee Kim, Yonsei University, Seoul, Korea |
|
P.25: |
Nanocrystalline-Silicon
TFT Fabricated without Any Substrate Heating for a Flexible
Display
Sun-jae Kim, Seoul National University, Seoul, Korea |
|
P.26: |
Thermally Annealed
Asymmetric-Offset Polycrystalline TFT with Low Leakage
Won-Kyu Lee, Seoul National University, Seoul, Korea |
|
P.27: |
Advanced
Gate-All-Around Fin-Like Poly-Si TFTs with Multiple Nanowire
Channels
Shih-Wei Tu, National Chiao Tung University, Hsinchu, Taiwan |
|
P.28: |
ZnO TFTs Fabricated
at Room Temperature by Solution Process
Ji-Young Oh, ETRI, Daejeon, Korea
|
|
P.29: |
Modeling of
Amorphous Oxide Semiconductor TFTs and Subgap Density of States
Hsing-Hung Hsieh, National Taiwan University, Taipei, Taiwan
|
|
P.30: |
A Relation between
an a-Si:H Integrated Buffer Transistor Resistance and Fall Time
of Gate Output Signal
Do Sung Kim, LG.Philips LCD, Paju, Korea
|
|
P.240: |
Late-News
Poster: Advanced Design of a-Si Gate Driver and Data
Line Multiplexing for Low Cost and Low-Power TFT-LCDs
Chih-Jen Shih, ChungHwa Picture Tubes, LTD, Padeh City, Taoyuan,
Taiwan
|
|
P.241: |
WITHDRAWN
|
|
P.259: |
Late-News
Poster: A 14-in. Uniform AMOLED Display with Low-Cost
PECVD Based Microcrystalline Silicon TFT Backplanes
Kunal Girotra, Samsung Electronics, Yongin, Gyeonggi-do, Korea
|
| Session 62:
Novel AMLCDs (Active-Matrix Devices) |
|
Friday, May 23 / 9:00 -
10:20 am / Petree Hall |
|
Chair:
Feng-Yuan Gan, AU Optronics Corp.
|
|
Co-Chair:
Nam Deog Kim, Samsung Electronics Co., Ltd.
|
|
62.1: |
WITHDRAWN |
|
62.2: |
AMLCD with Carbon-Nanotube
Pixel Electrodes
Axel Schindler, Universitaet Stuttgart, Stuttgart, Germany |
|
62.3: |
A Non-Rectangular
Heart-Shaped SOG-LCD
Yoshihiro Nonaka, NEC Corp., Kanagawa, Japan |
|
62.4: |
Development of
Zigzag TFT-Driven OCB for Field-Sequential-Color LCDs with High
Aperture Ratio
Chao-Hui Wu, HannStar Display Corp., Taoyuan, Taiwan
|
| Session 69:
Novel TFTs (Active-Matrix Devices) |
|
Friday, May 23 / 10:40 am -
12:00 pm / Petree Hall |
|
Chair:
Willem Den Boer, ScanVue Technologies LLC
|
|
Co-Chair:
John Zhong, Apple, Inc.
|
|
69.1: |
Invited
Paper: Time-Multiplexed
Optical-Shutter (TMOS) Technology: Advantages and Advances
Dan Van Ostrand, Uni-Pixel Displays, The Woodlands, TX, USA
|
|
69.2: |
New R2PAT Printing
Method for TFT Electrode Fabrication Process
Masanobu Tanaka, Sony Corp., Kanagawa, Japan |
|
69.3: |
Transflective IPS-LCD
with Improved Reflective Contrast Ratio
Kenichi Mori, NEC LCD Technologies, Kanagawa, Japan |
|
69.4:
|
Invited
Paper: SELAX Technology for Poly-Si TFTs Integrated
with Si TFTs
Takuo Kaitoh, Hitachi Displays, Ltd., Mobara, Japan
|
