Main Program Page

PRELIMINARY PROGRAM
2008 SID INTERNATIONAL SYMPOSIUM

MAY 20-23, 2008 (Tuesday - Friday)
LOS ANGELES CONVENTION CENTER
LOS ANGELES, CALIFORNIA, USA

Session 3: AMOLEDs I (Active-Matrix Devices)
Tuesday, May 20 / 10:50 am - 12:10 pm / Concourse Hall 151
Chair: Mike Hack, Universal Display Corp.
Co-Chair: Takatoshi Tsujimura, Kodak Japan, Ltd.
3.1:  12.1-in. WXGA AMOLED Display Driven by In-Ga-Zn-O TFT Arrays
Yeon-Gon Mo, Samsung SDI, Yongin, Korea
3.2: 15-in. XGA Dual-Plate OLED Display (DOD) Based on a-Si TFT Backplane
Chang-Wook Han, LG.Philips LCD, Kyunggi-do, Korea
3.3:  Invited Paper: AMOLED Technologies for Uniform Image and Sufficient Lifetime of Image Sticking
Yojiro Matsueda, Samsung, SDI Co., Ltd., Kyunggi-do, Korea
3.4: Invited Paper: A Novel Use of MEMS Switches in Driving AMOLEDs
Jun-Bo Yoon, KAIST, Daejeon, Korea
Session 9: AMOLEDs II (Active-Matrix Devices)
Tuesday, May 20 / 2:00 - 3:10 pm / Concourse Hall 151
Chair: Roger G. Stewart, Sourland Mountain Associates
Co-Chair: Makoto Ohkura, Hitachi Displays, Ltd.
9.1:  A Stable Full-Color AMOLED Display Using a-Si:H TFTs and White PHOLEDs
Jin Jang, Kyung Hee University, Seoul, Korea
9.2: Sequential Lateral Solidification (SLS) Process for Large-Area AMOLEDs
Jae Beom Choi, Samsung Electronics Co., Ltd., Kyunggi-do, Korea
9.3: A 15-in. AMOLED Display with SPC TFTs and a Symmetric Driving Method
Sang-Hoon Jung, LG.Philips LCD R&D Center, Anyang, Korea
9.4:  Late-News Paper: Fast Current-Programming Method to OLED
Chang Hoon Shim, Kyushu University, Fukuoka, Japan
Session 16: AMLCD TV (Active-Matrix Devices)
Tuesday, May 20 / 3:40 - 5:00 pm / Concourse Hall 151
Chair: Kalluri R. Sarma, Honeywell, Inc.
Co-Chair: Nam Deog Kim, Samsung Electronics Co., Ltd.
16.1: 82-in. Ultra-Definition LCD Using New Driving Scheme and Advanced Super-PVA Technology
Sang Soo Kim, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea
16.2:  A Novel Super-PVA Cell Structure with High Contrast Ratio
Su Jeong Kim, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea
16.3: Enhanced Oblique-Viewing-Angle Color Performance for Super-PVA Panels
Bongim Park, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea
16.4:  Development of Asymmetric-Gate-Coupled Eight-Domain (AGC-8D) HVA for TFT-LCD TVs
Po-Sheng Shih, Hannstar, Taoyuan, Taiwan
Session 23: Flexible Displays I (Active-Matrix Devices)
Wednesday, May 21, 2008 / 9:00 - 10:00 am / Petree Hall
Chair: Jin Jang, Kyung Hee University
Co-Chair: Jurgen Daniel, Palo Alto Reseach Center
23.1:  Invited Paper: Models and Experiments of Mechanical Integrity for Flexible Displays
Yves Leterrier, Laboratoire de Technolegie Des Composites et Polymères (LTC), Ecole Polytechniqu, Lausanne, Switzerland
23.2:  A 10-in. Printed Flexible Active-Matrix OTFT Array for QR-LPD Based Motion-Picture Displays
Hiroki Maeda, Dai Nippon Printing Co., Ltd., Chiba, Japan
23.3: Flexible Field-Sequential-Color FLCD Panels Driven by Poly-Si TFTs
Yoji Iwamoto, Dai Nippon Printing Co., Ltd., Chiba, Japan
23.4:  Active-Matrix Backplanes Produced by Roll-to-Roll Self-Aligned Imprint Lithography
Warren Jackson, Hewlett-Packard Laboratories, Palo Alto, CA, USA
Session 30: Flexible Displays II (Active-Matrix Devices)
Wednesday, May 21 / 10:40 - 11:40 am / Petree Hall
Chair: Jürgen Daniel, Palo Alto Reseach Center
Co-Chair: Makoto Ohkura, Hitachi Displays, Ltd.
30.1:  Flexible Image Sensor Made of a-Si:H TFTs on Metal Foil
Jin Jang, Kyung Hee University, Seoul, Korea
30.2: Active-Matrix Electrophoretic Displays on Temporary Bonded Stainless-Steel Substrates with 180°C a-Si:H TFTs
Shawn O'Rourke, Arizona State University, Tempe, AZ, USA
30.3:  Highly Flexible Low-Power-Consumption AMOLED Displays on Ultra-Thin Stainless-Steel Substrates
Ray Ma, Universal Display Corp., Trenton, NJ, USA
Session 42: Oxide TFTs (Active-Matrix Devices)
Thursday, May 22 / 9:00 - 10:20 am / Petree Hall
Chair: Hyun Jae Kim, Yonsei University
Co-Chair: Takatoshi Tsujimura, Kodak Japan, Ltd.
42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs
Ryo Hayashi, Canon Research Center, Tokyo, Japan
42.2:  The World's Largest (15-in.) XGA LCD Panel Using IGZO Oxide TFTs
Je-Hun Lee, Samsung Electronics Co., Ltd., Youngin, Korea
42.3:  Transparent ZnO TFT for the Application of High-Aperture-Ratio Bottom-Emitting AMOLED Display
Sang-Hee Park, ETRI, Daejeon, Korea
42.4:  Late-News Paper: 40-in. QVGA AMOLED Driven by the Threshold-Voltage-Controlled Amorphous GIZO (Ga2O3-In2O3-ZnO) TFT
Kyoung-Seok Son, Samsung Advanced Institute of Technology, Yongin-Si, Korea
Session 48: Active-Matrix Display Sensors (Active-Matrix Devices)
Thursday, May 22 / 10:40 am - 12:00 pm / Petree Hall
Chair: Fujio Okumura, NEC Corp.
Co-Chair: Norbert Fruehauf, University of Stuttgart
48.1:  A New Monolithic Poly-Si Ambient Light-Sensor System with Wide Dynamic Range for Active-Matrix Displays by Employing an Adaptive Sensitivity Control
Hyun-Sang Park, Seoul National University, Seoul, Korea
48.2: Display Architecture Suitable for Multiple Ambient Light-Sensor Integration Using LTPS Technology
Takashi Nakamura, Toshiba Matsushita Display Technology Co., Ltd., Saitama, Japan
48.3:  A 2-in. LTPS AMOLED with Embedded Lateral p-i-n Photodiode Sensors
Jin Jang, Kyung Hee University, Seoul, Korea
48.4: 

Sensor-Embedded Electrophoretic Display Using Organic TFTs on Plastic
Jin Jang, Kyung Hee University, Seoul, Korea

Session 55: Integrated AMLCDs (Active-Matrix Devices)
Thursday, May 22 / 1:30 - 2:50 pm / Petree Hall
Chair: John Zhong, Apple, Inc.
Co-Chair: Hyun Jae Kim, Yonsei University
55.1: An Inner Touch-Screen-Panel-Embedded 12.1-in., a-Si:H TFT-LCD
Bong-Hyun You, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea
55.2:  Integrated Active-Matrix Capacitive Sensors for Touch-Panel LTPS TFT-LCDs
Eiji Kanda, Seiko-Epson Corp., Nagano, Japan
55.3: Low-Cost 32-in. HDTV Panel Employing Gate IC Integration and Data-Line Reduction
Min-Cheol Lee, Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea
55.4: Design of Integrated a-Si Gate Driver Circuits for Low Power Consumption
Injae Hwang, LCD Business Samsung Electronics Co., Ltd., Chungcheongnam-do, Korea
Poster Session
Thursday, May 22 / 4:00 - 7:00 pm / Exhibit Hall B
Active-Matrix Devices
P.1:  Artificial Retina Using Thin-Film Devices
Mutsumi Kimura, Ryukoku University, Shiga, Japan
P.2:  Pulse-Width Modulation with Current Uniformization for TFT-OLEDs
Mutsumi Kimura, Ryukoku University, Shiga, Japan
P.3: Future Design Impact of Large-Sized Color-Sequential TFT-LCDs
Kwang Jo Hwang, LG.Philips LCD, Kyunggi-do, Korea
P.4: Mechanisms of Threshold-Voltage Drift in Nanocrystalline TFTs for Active-Matrix Displays
Francois Templier, CEA-LETI, Grenoble, France
P.5: Spacer Technique to Fabricate poly-Si TFTs with 50-nm Nanowire Channels
Guan-Liang Lin, National Chiao-Tung University, Hsinchu, Taiwan
P.6:  Zn0.97Zr0.03O TFT Fabricated by Sol-Gel Method and Its Application for Active-Matrix LCDs
Shin-Chuan Chiang, Taiwan TFT -LCD Association (TTLA), Hsinchu, Taiwan
P.7:  Improving Electrical Performance of the Scaled Low-Temperature Poly-Si TFTs Using Vacuum-Encapsulation Technique
Wei-Kai Lin, National Chiao Tung University, Hsinchu, Taiwan
P.8: A New Hybrid Analog/Digital Driving Method to Improve AMOLED Lifetime
Suhwan Kim, Seoul National University, Seoul, Korea
P.9: Metallic Nanowire Film as Transparent Conducting Layer in TFT-LCDs
Shih-Hsiang Lai, Taiwan TFT LCD Association (TTLA), Hsinchu, Taiwan
P.10:  Low-Voltage Transflective LCD with Wide Viewing Angle and Low Gray-Level Inversion
Chia-Chiang Hsiao, AU Optonics Corp., Hsinchu, Taiwan
P.11: Amorphous In2O3-Ga2O3-ZnO TFTs and ICs on Flexible and Colorless Polyimide Substrates
Chung-Chih Wu, National Taiwan University, Taipei, Taiwan
P.12: A New Stable a-Si:H TFT Pixel for AMOLEDs by Employing the a-Si:H TFT Photo Sensor
Hee-Sun Shin, Seoul National University, Seoul, Korea
P.13:  Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays
Chiao Shun Chuang, National Chiao Tung University, Hsinchu, Taiwan
P.14: Low-Cost AMOLED Televison with Ignis Maxlife Compensating Technology
Gholamreza Chaji, Ignis Innovation, Inc., Waterloo, Ontario, Canada
P.15:  A 3-in. Active Matrix for Color-Sequential LCD (CS-LCD) Based on Metal-Induced Continuous Zonal Domain (CZD) Polycrystalline-Silicon Technology
Shuyun Zhao, Hong Kong University of Science and Technology, Hong Kong, China
P.16:  Noble a-Si:H Gate Driver with High Stability
Jin Jang, Kyung Hee University, Seoul, Korea
P.17:  Low-Power Level Shifter for System-on-Panel Applications
Seung-Woo Lee, Kyung Hee University, Seoul, Korea
P.18:  Design of a-Si TFT Gate Drivers and the Area Scaling Properties
Yong Ho Jang, LG.Philips LCD, Kyunggi-do, Korea
P.19:  Flexible Pentacene Organic TFTs Using Sol-Gel Hybrid Polymer Gate Dielectrics
Byeong-Soo Bae, KAIST, Daejeon, Korea
P.20:  Post-Annealing and Passivations of Transparent Bottom-Gate IGZO TFTs
Doo-Hee Cho, Electronics and Telecommunications Research Institute, Daejeon, Korea
P.21:  Stability and Intergrability Evaluation of Organic TFT with Solution-Processible Semiconductor
JingYi Yan, ITRI-DTC, Hsinchu, Taiwan
P.22:  Elecctrical Stability of ZnO TFT During Gate-Bias Stress
Jae-Hong Jeon, Korea Aerospace University, Kyunggi-do, Korea
P.23:  Transparent Amorphous Oxide TFTs Fabricated by Solution Coating Process
Byeong-Soo Bae, KAIST, Daejeon, Korea
P.24:  Fabrication of Solution-Processed InGaZnO TFT for AMOLED Backplane
Gun Hee Kim, Yonsei University, Seoul, Korea
P.25:  Nanocrystalline-Silicon TFT Fabricated without Any Substrate Heating for a Flexible Display
Sun-jae Kim, Seoul National University, Seoul, Korea
P.26:  Thermally Annealed Asymmetric-Offset Polycrystalline TFT with Low Leakage
Won-Kyu Lee, Seoul National University, Seoul, Korea
P.27:  Advanced Gate-All-Around Fin-Like Poly-Si TFTs with Multiple Nanowire Channels
Shih-Wei Tu, National Chiao Tung University, Hsinchu, Taiwan
P.28:  ZnO TFTs Fabricated at Room Temperature by Solution Process
Ji-Young Oh, ETRI, Daejeon, Korea
P.29:  Modeling of Amorphous Oxide Semiconductor TFTs and Subgap Density of States
Hsing-Hung Hsieh, National Taiwan University, Taipei, Taiwan
P.30:  A Relation between an a-Si:H Integrated Buffer Transistor Resistance and Fall Time of Gate Output Signal
Do Sung Kim, LG.Philips LCD, Paju, Korea
P.240:  Late-News Poster: Advanced Design of a-Si Gate Driver and Data Line Multiplexing for Low Cost and Low-Power TFT-LCDs
Chih-Jen Shih, ChungHwa Picture Tubes, LTD, Padeh City, Taoyuan, Taiwan
P.241:  WITHDRAWN
P.259:  Late-News Poster: A 14-in. Uniform AMOLED Display with Low-Cost PECVD Based Microcrystalline Silicon TFT Backplanes
Kunal Girotra, Samsung Electronics, Yongin, Gyeonggi-do, Korea
Session 62: Novel AMLCDs (Active-Matrix Devices)
Friday, May 23 / 9:00 - 10:20 am / Petree Hall
Chair: Feng-Yuan Gan, AU Optronics Corp.
Co-Chair: Nam Deog Kim, Samsung Electronics Co., Ltd.
62.1: WITHDRAWN
62.2: AMLCD with Carbon-Nanotube Pixel Electrodes
Axel Schindler, Universitaet Stuttgart, Stuttgart, Germany
62.3:  A Non-Rectangular Heart-Shaped SOG-LCD
Yoshihiro Nonaka, NEC Corp., Kanagawa, Japan
62.4:  Development of Zigzag TFT-Driven OCB for Field-Sequential-Color LCDs with High Aperture Ratio
Chao-Hui Wu, HannStar Display Corp., Taoyuan, Taiwan
Session 69: Novel TFTs (Active-Matrix Devices)
Friday, May 23 / 10:40 am - 12:00 pm / Petree Hall
Chair: Willem Den Boer, ScanVue Technologies LLC
Co-Chair: John Zhong, Apple, Inc.
69.1: Invited Paper: Time-Multiplexed Optical-Shutter (TMOS) Technology: Advantages and Advances
Dan Van Ostrand, Uni-Pixel Displays, The Woodlands, TX, USA
69.2:  New R2PAT Printing Method for TFT Electrode Fabrication Process
Masanobu Tanaka, Sony Corp., Kanagawa, Japan
69.3:  Transflective IPS-LCD with Improved Reflective Contrast Ratio
Kenichi Mori, NEC LCD Technologies, Kanagawa, Japan
69.4:  Invited Paper: SELAX Technology for Poly-Si TFTs Integrated with Si TFTs
Takuo Kaitoh, Hitachi Displays, Ltd., Mobara, Japan